Dr. Dong-Wook Lee Profile

Dr. Dong-Wook Lee

at Hynix Semiconductor Inc

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Author

Publications (11)

Proceedings Article | 23 October 2015 Paper

Investigation of scum type growing defects on attenuated PSM and its prevention

Jihwan Choi, Yongho Kim, Dongwook Lee, Hoyong Jung, Snagpyo Kim, Donggyu Yim

Proceedings Volume 9635, 96351O (2015) https://doi.org/10.1117/12.2196069

KEYWORDS: Air contamination, Chromium, Photomasks, Critical dimension metrology, Semiconducting wafers, Oxides, Deep ultraviolet, Transmittance, Scanners, Phase shifts

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Proceedings Article | 9 September 2013 Paper

Analysis of EUV mask durability under various absorber etch conditions

Dong Wook Lee, Sang Jin Jo, Sung Hyun Oh, Tae Joong Ha, Sang Pyo Kim, Dong Gyu Yim

Proceedings Volume 8880, 88801Y (2013) https://doi.org/10.1117/12.2026206

KEYWORDS: Etching, Ruthenium, Photomasks, Reflectivity, Extreme ultraviolet, Multilayers, Semiconducting wafers, Ultraviolet radiation, Scanning probe microscopy, Transmission electron microscopy

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Proceedings Article | 17 October 2008 Paper

Simulation analysis of backside defects printability in 193nm photolithography

Jisun Ryu, Dongwook Lee, Jinho Ryu, Sookyeong Jeong, SangPyo Kim, Changyeol Kim

Proceedings Volume 7122, 712218 (2008) https://doi.org/10.1117/12.801437

KEYWORDS: Photomasks, Semiconducting wafers, Optical lithography, Opacity, Fiber optic illuminators, Solids, Coherence (optics), Critical dimension metrology, Lithography, Printing

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Proceedings Article | 30 October 2007 Paper

Design for CD correction strategy using a resist shrink method via UV irradiation for defect-free photomask

Jin Ho Ryu, Dong Wook Lee, Ho Yong Jung, Sang Pyo Kim, Oscar Han

Proceedings Volume 6730, 67300K (2007) https://doi.org/10.1117/12.746787

KEYWORDS: Chromium, Critical dimension metrology, Etching, Photoresist processing, Ultraviolet radiation, Photomasks, Dry etching, Inspection, Photoresist materials, Oxygen

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As the specification for photomask becomes tighter, it is strongly demanded for achieving precise CD MTT (critical dimension mean to target) and enhanced defect controllability in photomask fabrication. First of all, it is necessary that reducing the factors of CD MTT error and introducing the reliable method to correct CD error for accurate CD requirement of attenuated PSM (phase shift mask). From this point of view, one of CD correction methods which consist of Cr CD measurement step after resist strip (strip inspection CD: SI CD) and additional corrective Cr dry etch step was developed. Previous SI CD correction process resulted in accurate CD control within the range of CD MTT. However it was not appropriate for defect control due to additional resist processes for selective protection of Cr pattern during CD correction process. In this study, the method for achieving precise CD MTT by correcting CD error without any resist process is investigated. It is not suitable for the CD correction process to control CD MTT precisely that Cr etched resist (etch inspection CD: EI CD) is very vulnerable to E-beam scanning during CD measurement. Otherwise, photoresist after Cr etch selectively shrinks via UV irradiation under ozone (O3) condition, which drives a reduction of CD MTT error as a result of accurate CD measurement (UV-irradiation inspection CD: UI CD). Moreover, it is not necessary any resist process for Cr protection due to UV irradiated resist as enough for a etch barrier. It is a strong advantage of novel CD correction method. This strategy solves the problems such as both CD measurement error on the EI CD correction method and defects originated from resist process on the SI CD correction method at once. For the successful incorporation of UI CD correction method, several items related with CD should be evaluated: accuracy and repeatability of CD measurement under UI CD, control of CD MTT and CD uniformity, additional corrective etch bias for UI CD, independence of corrective Cr etch process from UV irradiated resist, isolated-dense CD difference,.. etc. In this paper, strategy of design for the progressive CD correction method for defect-free photomask and process details will be discussed.

Proceedings Article | 30 October 2007 Paper

The advanced mask CD MTT control using dry etch process for sub 65 nm tech

Sang Jin Jo, Ho Yong Jung, Dong Wook Lee, Jae Cheon Shin, Jea Young Jun, Tae Joong Ha, Oscar Han

Proceedings Volume 6730, 673008 (2007) https://doi.org/10.1117/12.746646

KEYWORDS: Etching, Chromium, Dry etching, Critical dimension metrology, Photomasks, Reliability, Electron beams, Scanning electron microscopy, Process control, Semiconductors

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Proceedings Article | 30 October 2007 Paper

Capability of eco-friendly cleaning strategy corresponding to advanced technology

Sookyeong Jeong, Dongwook Lee, Jisun Ryu, Jinho Ryu, Sangpyo Kim, Oscar Han

Proceedings Volume 6730, 673018 (2007) https://doi.org/10.1117/12.746782

KEYWORDS: Ultraviolet radiation, Air contamination, Particles, Photomasks, Ions, Chromium, Molecules, Metrology, Critical dimension metrology, Reflectivity

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Proceedings Article | 20 October 2006 Paper

Multi-point CD measurement method to evaluate pattern fidelity and performance of mask

Munsik Kim, Hyemi Lee, Kanjoon Seo, Dongwook Lee, Yongkyoo Choi, Sunghyun Oh, Oscar Han

Proceedings Volume 6349, 634944 (2006) https://doi.org/10.1117/12.686473

KEYWORDS: Critical dimension metrology, Photomasks, Scanning electron microscopy, Image filtering, Line edge roughness, Anisotropic filtering, Time metrology, Anisotropic diffusion, Scatterometry, Metrology

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Proceedings Article | 20 October 2006 Paper

Novel cleaning techniques to achieve defect-free photomasks for sub-65-nm nodes

Jin Ho Ryu, Dong Wook Lee, Ji Sun Ryu, Sang Pyo Kim, Oscar Han

Proceedings Volume 6349, 63492V (2006) https://doi.org/10.1117/12.686545

KEYWORDS: Photomasks, Chromium, Ions, Opacity, Air contamination, Photoresist processing, Quartz, Particles, Ultraviolet radiation, Chemistry

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Proceedings Article | 6 December 2004 Paper

Effect of UV/O3 treatment on mask surface to reducing sulfuric residue ions

Dong Wook Lee, Ho Yong Jung, Mun Sik Kim, Jun Sik Lee, Yong Kyoo Choi, Oscar Han

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.569015

KEYWORDS: Ions, Ultraviolet radiation, Oxygen, Chemical analysis, Contamination, Phase shifts, Photomasks, Air contamination, Atomic force microscopy, Transmission electron microscopy

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Proceedings Article | 20 August 2004 Paper

Investigation of Cr defect in high Cr load logic mask

Ho-Yong Jung, Sung Jin Choi, Mun-Sik Kim, Dong Wook Lee, Junsik Lee, Oscar Han

Proceedings Volume 5446, (2004) https://doi.org/10.1117/12.557677

KEYWORDS: Chromium, Logic, Etching, Dry etching, Photomasks, Scanning electron microscopy, Image processing, Photoresist processing, Inspection, Atomic force microscopy

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Proceedings Article | 20 August 2004 Paper

Investigation of sub-pellicle defect formation at KrF lithography

Junsik Lee, Dong Wook Lee, Mun-Sik Kim, Ho-Yong Jung, Oscar Han

Proceedings Volume 5446, (2004) https://doi.org/10.1117/12.557703

KEYWORDS: Pellicles, Ions, Photomasks, Reticles, Adhesives, Inspection, Chemical analysis, Raman spectroscopy, Chromatography, Scanning electron microscopy

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Showing 5 of 11 publications

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