Dr. Peng Xie Profile

Dr. Peng Xie

at Applied Materials Inc

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Author

Publications (15)

Proceedings Article | 2 April 2014 Paper

Tracking defectivity of EUV and SADP processing using bright-field inspection

Nadine Alexis, Chris Bencher, Yongmei Chen, Huixiong Dai, Kfir Dotan, Dale Huang, Alison Nalven, Chris Ngai, Gaetano Santoro, Bharath Vijayaraghavan, Peng Xie, Jun Xue

Proceedings Volume 9050, 905030 (2014) https://doi.org/10.1117/12.2048356

KEYWORDS: Inspection, Polarization, Extreme ultraviolet, Semiconducting wafers, Extreme ultraviolet lithography, Lithography, Photomasks, Signal to noise ratio, Wafer inspection, Metrology

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Proceedings Article | 27 March 2014 Paper

Novel and cost-effective multiple patterning technology by means of invisible SiOxNy hardmask

Linus Jang, Young Joon Moon, Ryoung-Han Kim, Christopher Bencher, Huixiong Dai, Peng Xie, Daniel Diehl, Yong Cao, Wilson Zeng, Christopher Ngai

Proceedings Volume 9051, 90510Y (2014) https://doi.org/10.1117/12.2046107

KEYWORDS: Photoresist materials, Optical lithography, Etching, Lithography, Semiconducting wafers, Silicon, System on a chip, Double patterning technology, Manufacturing, Reflectivity

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Proceedings Article | 12 April 2013 Paper

Line edge roughness (LER) mitigation studies specific to interference-like lithography

Burak Baylav, Andrew Estroff, Peng Xie, Bruce Smith

Proceedings Volume 8683, 86831Y (2013) https://doi.org/10.1117/12.2011505

KEYWORDS: Line edge roughness, Photomasks, Nanoimprint lithography, Image filtering, Lithography, Semiconducting wafers, Projection lithography, Critical dimension metrology, Diffraction, Image processing

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Proceedings Article | 29 March 2013 Paper

Post-litho line edge/width roughness smoothing by ion implantations

Tristan Ma, Peng Xie, Ludovic Godet, Patrick Martin, Chris Campbell, Jun Xue, Liyan Miao, Yongmei Chen, Huixiong Dai, Christopher Bencher, Chris Ngai

Proceedings Volume 8682, 868206 (2013) https://doi.org/10.1117/12.2013435

KEYWORDS: Ion implantation, Plasma, Semiconducting wafers, Line edge roughness, Etching, Ions, Line width roughness, Photoresist materials, Extreme ultraviolet, Plasma etching

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Proceedings Article | 29 March 2013 Paper

Understanding device impact of line edge/width roughness in frequency domain

Peng Xie, He Ren, Aneesh Nainani, Huixiong Dai, Chris Bencher, Chris Ngai

Proceedings Volume 8684, 86840J (2013) https://doi.org/10.1117/12.2013495

KEYWORDS: Line edge roughness, Line width roughness, Dielectric breakdown, Dielectrics, Spatial frequencies, Reliability, Lithography, TCAD, Neodymium

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Proceedings Article | 13 March 2012 Paper

Scanning interference evanescent wave lithography for sub-22 nm generations

Peng Xie, Bruce Smith

Proceedings Volume 8326, 83260Y (2012) https://doi.org/10.1117/12.917955

KEYWORDS: Prisms, Imaging systems, Lithography, Head, Semiconducting wafers, Control systems, Transducers, Neodymium, Silica, Servomechanisms

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Proceedings Article | 16 April 2011 Paper

Sensitive polysulfone based chain scissioning resists for 193nm lithography

Yong Keng Goh, Lan Chen, Anneke Dorgelo, Xie Peng, Neal Lafferty, Bruce Smith, Paul Zimmerman, Warren Montgomery, Idriss Blakey, Andrew Whittaker

Proceedings Volume 7972, 79722E (2011) https://doi.org/10.1117/12.881700

KEYWORDS: Line edge roughness, Polymers, Absorbance, Water, Sulfur, Scanning electron microscopy, Lithography, Double patterning technology, 193nm lithography, Coating

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Proceedings Article | 16 April 2011 Paper

Development of an inorganic nanoparticle photoresist for EUV, e-beam, and 193nm lithography

Marie Krysak, Markos Trikeriotis, Evan Schwartz, Neal Lafferty, Peng Xie, Bruce Smith, Paul Zimmerman, Warren Montgomery, Emmanuel Giannelis, Christopher Ober

Proceedings Volume 7972, 79721C (2011) https://doi.org/10.1117/12.879385

KEYWORDS: Etching, Nanoparticles, Resistance, Oxides, Photoresist materials, Electron beam lithography, Hafnium, Lithography, Extreme ultraviolet lithography, Refractive index

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Proceedings Article | 30 March 2010 Paper

Alternatives to chemical amplification for 193nm lithography

Burak Baylav, Meng Zhao, Ran Yin, Peng Xie, Chris Scholz, Bruce Smith, Thomas Smith, Paul Zimmerman

Proceedings Volume 7639, 763915 (2010) https://doi.org/10.1117/12.846924

KEYWORDS: Polymers, Polymethylmethacrylate, Photoresist materials, Etching, Lithography, Resistance, Absorbance, Deep ultraviolet, Photoresist developing, Scanning electron microscopy

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Proceedings Article | 26 March 2010 Paper

Development of an inorganic photoresist for DUV, EUV, and electron beam imaging

Markos Trikeriotis, Woo Jin Bae, Evan Schwartz, Marie Krysak, Neal Lafferty, Peng Xie, Bruce Smith, Paul Zimmerman, Christopher Ober, Emmanuel Giannelis

Proceedings Volume 7639, 76390E (2010) https://doi.org/10.1117/12.846672

KEYWORDS: Nanoparticles, Photoresist materials, Electron beam lithography, Etching, Hafnium, Resistance, Oxides, Photoresist developing, Deep ultraviolet, Refractive index

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Proceedings Article | 11 March 2010 Paper

Metamaterials for enhancement of DUV lithography

Andrew Estroff, Neal Lafferty, Peng Xie, Bruce Smith

Proceedings Volume 7640, 76402W (2010) https://doi.org/10.1117/12.848427

KEYWORDS: Surface plasmons, Aluminum, Deep ultraviolet, Dielectrics, Molybdenum, Metamaterials, Reflectivity, Refractive index, Tin, Reflection

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Proceedings Article | 10 March 2010 Paper

Achieving interferometric double patterning through wafer rotation

Peng Xie, Neal Lafferty, Bruce Smith

Proceedings Volume 7640, 76401Z (2010) https://doi.org/10.1117/12.848345

KEYWORDS: Double patterning technology, Semiconducting wafers, Interferometry, Optical alignment, Lithography, Materials processing, Imaging systems, Scanning electron microscopy, Optical lithography, Photomasks

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Proceedings Article | 16 March 2009 Paper

Analysis of higher order pitch division for sub-32nm lithography

Peng Xie, Bruce Smith

Proceedings Volume 7274, 72741Y (2009) https://doi.org/10.1117/12.816131

KEYWORDS: Double patterning technology, Optical lithography, Lithography, Thin film coatings, Process control, Etching, Photoresist materials, Reactive ion etching, Extreme ultraviolet, Photomasks

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Proceedings Article | 12 March 2008 Paper

Applications of TM polarized illumination

Bruce Smith, Jianming Zhou, Peng Xie

Proceedings Volume 6924, 69240J (2008) https://doi.org/10.1117/12.775739

KEYWORDS: Polarization, Reflectivity, Modulation, Photoresist materials, Reflection, Dielectric polarization, Double patterning technology, Refractive index, Interfaces, Silicon

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The use of transverse electric (TE) polarization has dominated illumination schemes as selective polarization is used for high-NA patterning. The benefits of TE polarization are clear - the interference of diffracted beams remains absolute at oblique angles. Transverse magnetic (TM) polarization is usually considered less desirable as imaging modulation from interference at large angle falls off rapidly as the 1/cosθ. Significant potential remains, however, for the use of TM polarization at large angles when its reflection component is utilized. By controlling the resist/substrate interface reflectivity, high modulation for TM polarization can be maintained for angles up to 90° in the resist. This can potentially impact the design of illumination away from most recent TE-only schemes for oblique imaging angles (high NA). We demonstrate several cases of TM illumination combined with tuned substrate reflectivity for 0.93NA, 1.20NA, and 1.35NA and compare results to TE and unpolarized cases. The goal is to achieve a flat response through polarization at large imaging angles. An additional application of TM illumination is its potential use for double patterning. As double patterning and double exposure approaches are sought in order to meet the needs of 32nm device generations and beyond, materials and process engineering challenges become prohibitive. We have devised a method for frequency doubling in a single exposure using an unconventional means of polarization selection and by making use of the reflective component produced at the photoresist/substrate interface. In doing so, patterns can be deposited into a photoresist film with double density. As an example, using a projection system numerical aperture of 1.20, with water as an immersion fluid, and a conventional polyacrylate 193nm photoresist, pattern resolution at 20nm half-pitch are obtainable (which is 0.125lambda/NA). The process to transfer this geometry into a hardmask layer uses conventional materials, including the photoresist layer and thin film silicon oxide based materials.

Proceedings Article | 21 March 2007 Paper

Double pattern EDA solutions for 32nm HP and beyond

George Bailey, Alexander Tritchkov, Jea-Woo Park, Le Hong, Vincent Wiaux, Eric Hendrickx, Staf Verhaegen, Peng Xie, Janko Versluijs

Proceedings Volume 6521, 65211K (2007) https://doi.org/10.1117/12.712773

KEYWORDS: Double patterning technology, Photomasks, Optical proximity correction, Optical lithography, Metals, Electronic design automation, Etching, Manufacturing, Logic, Image processing

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The fate of optical-based lithography hinges on the ability to deploy viable resolution enhancement techniques (RET). One such solution is double patterning (DP). Like the double-exposure technique, double patterning is a decomposition of the design to relax the pitch that requires dual masks, but unlike double-exposure techniques, double patterning requires an additional develop and etch step, which eliminates the resolution degradation due to the cross-coupling that occurs in the latent images of multiple exposures. This additional etch step is worth the effort for those looking for an optical extension [1]. The theoretical k₁ for a double-patterning technique of a 32nm half-pitch (HP) design for a 1.35NA 193nm imaging system is 0.44 whereas the k₁ for a single-exposure technique of this same design would be 0.22 [2], which is sub-resolution. There are other benefits to the DP technique such as the ability to add sub-resolution assist features (SRAF) in the relaxed pitch areas, the reduction of forbidden pitches, and the ability to apply mask biases and OPC without encountering mask constraints. Similarly to AltPSM and SRAF techniques one of the major barriers to widespread deployment of double patterning to random logic circuits is design compliance with split layout synthesis requirements [3]. Successful implementation of DP requires the evolution and adoption of design restrictions by specifically tailored design rules. The deployment of double patterning does spawn a couple of issues that would need addressing before proceeding into a production environment. As with any dual-mask RET application, there are the classical overlay requirements between the two exposure steps and there are the complexities of decomposing the designs to minimize the stitching but to maximize the depth of focus (DoF). In addition, the location of the design stitching would require careful consideration. For example, a stitch in a field region or wider lines is preferred over a transistor region or narrower lines. The EDA industry will be consulted for these sound automated solutions to resolve double-patterning sensitivities and to go beyond this with the coupling of their model-based and process-window applications. This work documented the resolution limitations of single exposure, and double-patterning with the latest hyper-NA immersion tools and with fully optimized source conditions. It demonstrated the best known methods to improve design decomposition in an effort to minimize the impact of mask-to-mask registration and process variance. These EDA solutions were further analyzed and quantified utilizing a verification flow.

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